Spin polarization created by spin-orbit coupling for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure

We theoretically study spin-polarized transport induced by spin-orbit coupling (SOC) as well as the Zeeman interaction for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure, which is constructed on surface of GaAs/AlxGa1-xAs heterostructure by patterning a ferromagnetic st...

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Bibliographic Details
Published in:Vacuum 2020-09, Vol.179, p.109405, Article 109405
Main Authors: Cao, Xue-Li, Liu, Gui-Xiang, Tang, Ge, Ma, Wen-Yue
Format: Article
Language:English
Subjects:
Hybrid magnetic-electric-barrier semiconductor microstructure
SOC
Spin filter
Spin polarization
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Summary:We theoretically study spin-polarized transport induced by spin-orbit coupling (SOC) as well as the Zeeman interaction for electrons in a hybrid magnetic-electric-barrier semiconductor microstructure, which is constructed on surface of GaAs/AlxGa1-xAs heterostructure by patterning a ferromagnetic stripe and a Schottky-metal stripe in parallel configuration. Electron-spin polarization is found to originate mainly from spin-orbit coupling. Spin polarization can be manipulated by adjusting Rashba or Dresselhause-SOC strength, which may result into a tunable spin filter for spintronics devices. •Spin-polarized transport is investigated in a hybrid MEB semiconductor microstructure.•Spin polarization results mainly from spin-orbit coupling.•Degree of spin polarization can be tuned by changing spin-orbit coupling strength.•This semiconductor microstructure can be used as a controllable spin filter.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2020.109405