Substrate temperature induced physical property variation of InxAl1-xN alloys prepared on Al2O3 by magnetron sputtering

• Published in: Vacuum 2020-09, Vol.179, p.109512, Article 109512
• Main Authors: Zhou, Yijian, Peng, Wenbo, Li, Jingjie, Liu, Yue, Zhu, Xuefeng, Wei, Jiaqing, Wang, Hui, Zhao, Yang
• Format: Article
• Language: English
• Subjects: InxAl1-xN; Magnetron sputtering; Optical and electrical properties; Substrate temperature
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2020.109512

In x Al 1-x N alloys were prepared on Al2O3 substrates using radio frequency magnetron sputtering. The physical properties of In x Al 1-x N alloys sputtered at different substrate temperatures were systematically studied. The results indicated that the sputtered In x Al 1-x N alloys had c-axis preferred orientation and exhibited phase separation under the substrate temperature over 450 °C. The In content was calculated about 0.62 according to the Vegard's law. It was found that the surface morphology of In0.62 Al0.38 N alloys showed a transition from nanodots to nanoclusters and disordered morphology as the substrate temperature was increased from 150 to 450 °C. This research will lay a good foundation for the application of InxAl1-x N-based optoelectronic devices. •InxAl1-xN alloys were sputtered by magnetron sputtering at different substrate temperature.•The substrate temperature is critical to effect the physical characteristics of InxAl1-xN alloys.•The In metal could form good ohmic contact on InAlN alloy surface.•The band gap bending factor b was calculated to be 3.0 eV.