Magnetic and structural properties of Fe-implanted GaN at room temperature

• Published in: Vacuum 2021-02, Vol.184, p.109909, Article 109909
• Main Authors: Li, Bingsheng, Peng, Dingping, Li, Junhan, Kang, Long, Zhang, Tongmin, Zhang, Zhenxing, Jin, Shuoxue, Cao, Xingzhong, Liu, Jihong, Wu, Lu, Wang, Xu, Fang, Zhongqiang, Zhou, Chunlin, Yang, Zhen, Krsjak, Vladimir
• Format: Article
• Language: English
• Subjects: Fe implantation; Ferromagnetism; GaN-Based diluted magnetic semiconductor; Positron annihilation spectroscopy; Raman spectroscopy
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2020.109909

GaN grown by metal-organic chemical vapour deposition on the sapphire substrate was implanted with 3 MeV Fe10+ ions to fluences of 1 × 1013 to 5 × 1015 ions/cm2 at room temperature. The change of magnetic property with the implantation fluence was measured by vibrating sample magnetometer. The structural features, including implantation-induced interstitials and vacancies, were studied by a combination of Raman spectroscopy, photoluminescence spectroscopy, transmission electron microscopy and positron annihilation technology. The ferromagnetic behaviour was observed in the as-grown sample, and the saturation magnetization reached the maximum after the Fe implantation to a fluence of 5× 1013 ions/cm2. With increasing fluence, it decreased to be even smaller than that of the as-grown sample. The possible reasons are discussed. •Magnetic and structural properties of Fe-implanted GaN were investigated. .•The N vacancies and dislocations can retard the Fe activation at Ga sites.•Defect annealing would improve the saturation magnetization of Fe-implanted GaN.