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The formation mechanism of (001) preferred orientation for anatase TiO2 film prepared by DC pulsed magnetron sputtering
TiO2 films were deposited by DC pulsed magnetron sputtering with different sputtering power density (SPD). Then, as-deposited TiO2 films were annealed at 600 °C and the anatase TiO2 films were obtained. XPS results showed Ti/O atom ratio was kept at 1/(1.94 ± 0.04) for all as-deposited and annealed...
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Published in: | Vacuum 2021-08, Vol.190, p.110287, Article 110287 |
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Main Authors: | , , , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | TiO2 films were deposited by DC pulsed magnetron sputtering with different sputtering power density (SPD). Then, as-deposited TiO2 films were annealed at 600 °C and the anatase TiO2 films were obtained. XPS results showed Ti/O atom ratio was kept at 1/(1.94 ± 0.04) for all as-deposited and annealed TiO2 films. XRD results showed that the annealed TiO2 films displayed obvious anatase (001) preferred orientation, which was deposited with SPD in 0.83 W/cm2. The cross-section TEM results showed that annealed TiO2 film with anatase (001) preferred orientation consisted of a small quantity of columnar crystals and a majority of equiaxed crystals, which [001] crystallographic axis was parallel to the normal direction of film. AFM results revealed that with SPD in 0.83 W/cm2, the dominated diffusion effect controlled TiO2 film growth process with Volmer-Weber mode, which contained the nano-size anatase crystal nuclei. The [001] crystal orientation of anatase crystal nuclei was uniform parallel to the normal direction of TiO2 film growth surface. During the annealing process, the nano-size anatase crystal nuclei grew and coalesced into the large anatase grains without the change of [001] crystal orientation, which resulted in TiO2 film with obvious (001) preferred orientation.
•TiO2 film was prepared by conventional DC pulsed magnetron sputtering technique.•As-deposited TiO2 film contained nano-size crystal nuclei with uniform [001] axis.•Annealed TiO2 film displayed grains with uniform [001] axis and (001) preferred orientation.•Diffusion effect controlled TiO2 film growth process with Volmer-Weber mode. |
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ISSN: | 0042-207X 1879-2715 |
DOI: | 10.1016/j.vacuum.2021.110287 |