Conductive SnO2-x thin films deposited by thermal ALD with H2O reactant

In this study, SnO2-x films were deposited by a thermal atomic layer deposition (ALD) method with H2O as a reactant. The electrical property of the films was assessed with the intention of applying them as a channel for a back-end-of-line (BEOL) compatible transistor. Under the thermal budget constr...

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Bibliographic Details
Published in:Vacuum 2022-06, Vol.200, p.111018, Article 111018
Main Authors: Lee, Gyeong Ryul, Seong, Minhyeong, Kim, Seonchang, Pyeon, Kyeongjin, Chung, Roy B.
Format: Article
Language:English
Subjects:
And BEOL-Compatible transistor
Carrier mobility
Post-annealing
Thermal ALD
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Summary:In this study, SnO2-x films were deposited by a thermal atomic layer deposition (ALD) method with H2O as a reactant. The electrical property of the films was assessed with the intention of applying them as a channel for a back-end-of-line (BEOL) compatible transistor. Under the thermal budget constraint (
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2022.111018