The resolution and repeatability of stress measurement by Raman and EBSD in silicon

• Published in: Vacuum 2022-09, Vol.203, p.111276, Article 111276
• Main Authors: Li, Xu, Jin, Senlin, Zhang, Ran, Gao, Ying, Liu, Zheng, Yao, Yaxuan, Wang, Yalei, Wang, Xueshen, Zhang, Yi, Tao, Xingfu
• Format: Article
• Language: English
• Subjects: EBSD; Raman; Repeatability; Resolution; Silicon; Stress
• ISSN: 0042-207X; 1879-2715
• DOI: 10.1016/j.vacuum.2022.111276

Raman spectrum and electron back scattered diffraction (EBSD) were employed to study the resolution and repeatability of stress measurement at Si (001) and Si (111) nanoindentations. The results revealed that anisotropic stress distributions were generated around Si (001) and Si (111) nanoindentations. Both Raman and EBSD had good stress resolution when they were used to measure residual stress on monocrystalline silicon. The stress resolutions of Raman on Si (001) and Si (111) were 0.43 MPa and 3.64 MPa, respectively. The stress measurement repeatability of Raman on Si (001) and Si (111) were respectively 1.69 MPa and 32.58 MPa, which was attributed to the smaller compliance tensor part of Si (001) stress calculation equation. The stress resolutions of EBSD on Si (001) and Si (111) were 0.13 MPa and 0.22 MPa, respectively. The stress measurement repeatability of EBSD on Si (001) and Si (111) were respectively 39.22 MPa and 19.15 MPa. •Anisotropic stress distributions existed at Si (001) and Si (111) nanoindentations.•Raman stress resolutions on Si (001) and Si (111) were respectively 0.43 MPa and 3.64 MPa.•EBSD stress resolutions on Si (001) and Si (111) were respectively 0.13 MPa and 0.22 MPa.•Raman stress measurement repeatability on Si (001) and Si (111) were respectively 1.69 MPa and 32.58 MPa.•EBSD stress measurement repeatability on Si (001) and Si (111) were respectively 39.22 MPa and 19.15 MPa.