Improved thermal stability and ultralow resistance drift of pseudo-binary Sb2Se3–Bi2S3 material

Pseudo-binary material Sb2Se3–Bi2S3 is constructed using Sb2Se3 (high thermal stability but high resistance drift) and Bi2S3 (low resistance drift but low thermal stability). Sb2Se3–Bi2S3 possesses the advantages of the two binary compounds and shows good thermal stability and ultralow resistance dr...

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Bibliographic Details
Published in:Vacuum 2022-11, Vol.205, p.111466, Article 111466
Main Authors: Chen, Yingqi, Wu, Tong, Wang, Guoxiang, Zhu, Jinyi, Meng, Fanzhen, Jiao, Yucheng
Format: Article
Language:English
Subjects:
Crystal structure
Resistance drift
Thermal properties
Thin film
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Summary:Pseudo-binary material Sb2Se3–Bi2S3 is constructed using Sb2Se3 (high thermal stability but high resistance drift) and Bi2S3 (low resistance drift but low thermal stability). Sb2Se3–Bi2S3 possesses the advantages of the two binary compounds and shows good thermal stability and ultralow resistance drift, which are related to the presence of amorphous Sb–Se phases and precipitation of Bi2S3 nanoparticles, respectively. The (Sb2Se3)43.2(Bi2S3)56.8 material has high crystallization temperature (220 °C) and low resistance drift (0.0022). Therefore, Sb2Se3–Bi2S3 could be one of the most promising materials for phase change memory. •Pseudo-binary Sb2Se3–Bi2S3 phase change films inherit the advantages of Sb2Se3 and Bi2S3.•The introduction of Bi2S3 suppress the precipitation of Sb2Se3, thus increasing crystallization temperature.•Pseudo-binary Sb2Se3–Bi2S3 materials obtain an ultra-low resistance drift.
ISSN:0042-207X
1879-2715
DOI:10.1016/j.vacuum.2022.111466