Modulation of vacancy-ordered double perovskite Cs2SnI6 for air-stable thin-film transistors

• Published in: Cell reports physical science 2022-04, Vol.3 (4), p.100812, Article 100812
• Main Authors: Liu, Ao, Zhu, Huihui, Reo, Youjin, Kim, Myung-Gil, Chu, Hye Yong, Lim, Jun Hyung, Kim, Hyung-Jun, Ning, Weihua, Bai, Sai, Noh, Yong-Young
• Format: Article
• Language: English
• Subjects: air stable; electronic property; metal doping; metal-halide perovskite; one-step solution process; precursor component engineering; thin-film transistor; vacancy-ordered double perovskite Cs2SnI6
• ISSN: 2666-3864; 2666-3864
• DOI: 10.1016/j.xcrp.2022.100812

Vacancy-ordered halide double perovskites are promising non-toxic and stable alternatives for their lead- and tin (II)-based counterparts in electronic and optoelectronic applications. Despite extensive theoretical studies on this emerging family of materials, efforts devoted to the chemical modulation of their thin-film properties and their potential application in electronic devices remain rare. Here, we develop a facile one-step solution processing strategy to tune the film quality of cesium tin (IV) iodide (Cs2SnI6) perovskite and demonstrate its feasibility in thin-film transistor (TFT) application. We reveal critical roles of precursor stoichiometric ratio and solvent engineering in achieving uniform and highly crystalline Cs2SnI6 films with superior electron mobility. We further modulate the electronic properties by incorporating an external manganese (Mn2+) dopant, achieving high-performance air-stable n-channel TFTs and all-perovskite complementary inverters. We anticipate that the present study would pave the way for expanding the environmentally friendly and stable perovskites toward widespread applications. [Display omitted] •Precursor engineering for one-step solution deposition of Cs2SnI6 thin films•Electrical modulation of the Cs2SnI6 perovskite for transistor application•Integrated transistors exhibit appealing electrical performance with high stability Liu et al. report the deposition of eco-friendly vacancy-ordered double perovskite Cs2SnI6 thin films using a one-step solution process. Subsequently, an external atomic doping is adopted to modulate the electrical property of the Cs2SnI6 perovskite. The resulting transistors exhibit appealing electrical performance with highly stable characteristics.