Low-Temperature Atomic Layer Deposition of Cobalt Oxide as an Effective Catalyst for Photoelectrochemical Water-Splitting Devices

We have developed a low-temperature atomic layer deposition (ALD) process for depositing crystalline and phase pure spinel cobalt oxide (Co3O4) films at 120 °C using [Co­(tBu2DAD)2] and ozone as coreagent. X-ray diffraction, UV–vis spectroscopy, atomic force microscopy, field emission scanning elect...

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Bibliographic Details
Published in:Chemistry of materials 2017-07, Vol.29 (14), p.5796-5805
Main Authors: Kim, Jiyeon, Iivonen, Tomi, Hämäläinen, Jani, Kemell, Marianna, Meinander, Kristoffer, Mizohata, Kenichiro, Wang, Lidong, Räisänen, Jyrki, Beranek, Radim, Leskelä, Markku, Devi, Anjana
Format: Article
Language:English
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Summary:We have developed a low-temperature atomic layer deposition (ALD) process for depositing crystalline and phase pure spinel cobalt oxide (Co3O4) films at 120 °C using [Co­(tBu2DAD)2] and ozone as coreagent. X-ray diffraction, UV–vis spectroscopy, atomic force microscopy, field emission scanning electron microscopy, X-ray photoelectron spectroscopy, and time-of-flight elastic recoil detection analysis were performed to characterize the structure and properties of the films. The as-deposited Co3O4 films are crystalline with a low amount of impurities (
ISSN:0897-4756
1520-5002
DOI:10.1021/acs.chemmater.6b05346