Preparation, Crystal Structure, and Properties of the Kagome Metal ThV 6 Sn 6

• Published in: Inorganic chemistry 2024-12, Vol.63 (49), p.23288-23295
• Main Authors: Xiao, Yusen, Chen, Yongliang, Ni, Hao, Li, Yong, Wen, Zhiwei, Cui, Yajing, Zhang, Yong, Liu, Shaohua, Wang, Cao, Zhong, Ruidan, Zhao, Yong
• Format: Article
• Language: English
• ISSN: 0020-1669; 1520-510X
• DOI: 10.1021/acs.inorgchem.4c03841

Kagome lattice materials are anticipated to exhibit unique properties stemming from the intricate interplay among geometry, magnetism, electronic correlation, and band topology. Here, we report a new ternary compound, ThV Sn , which contains double-layer kagome networks composed of vanadium atoms. The compound crystallizes in an HfFe Ge -type structure with cell parameters of = = 5.564(2) Å and = 9.214(0) Å. Magnetic measurements reveal a Pauli paramagnetism state, and the electronic resistivity and specific heat data demonstrate metallic behavior. At low temperatures, the compound shows significant unsaturated magnetoresistance and multiband Hall effects, indicative of complex electronic transport mechanisms. The electron correlation effect is simultaneously underscored by the Wilson and Kadowaki-Woods ratios. First-principles calculations point to the existence of van Hove singularities in the proximity of the Fermi level at the point in ThV Sn . Additionally, the electronic band structure features multiple topologically nontrivial crossings, enriching the material's topological landscape.