Electrochemical Investigation of Si of Various Dopant Concentrations at Negative Overpotentials in Aqueous Electrolyte

n-Type and p-type Si samples of various doping concentrations (1014–1019 cm–3) are investigated in hydrogen fluoride electrolyte using voltammetry and electrochemical impedance spectroscopy (EIS) at negative overpotentials. In addition to the features of solution resistance, space charge, and double...

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Bibliographic Details
Published in:Journal of physical chemistry. C 2021-12, Vol.125 (50), p.27736-27746
Main Authors: Priyadarshani, Divya, Choudhury, Debittree, Joy, Miji E, Kottantharayil, Anil, Neergat, Manoj
Format: Article
Language:English
Subjects:
C: Physical Properties of Materials and Interfaces
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Summary:n-Type and p-type Si samples of various doping concentrations (1014–1019 cm–3) are investigated in hydrogen fluoride electrolyte using voltammetry and electrochemical impedance spectroscopy (EIS) at negative overpotentials. In addition to the features of solution resistance, space charge, and double layer common to all the doped-Si samples, up to six different types of low-frequency (lf) features are observed in the EIS spectra, depending on the dopant and its concentration. These lf features corresponding to the sequential or simultaneous hydride formation and evolution processes are well resolved on Si of appropriate dopant concentration, unlike in the case of the widely investigated Pt and Pd. The results reported here with Si, a semiconducting material, lend experimental credence to the proposed theoretical models of hydrogen evolution reaction (HER), and the spectra are similar to the simulated spectra reported in the literature.
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.1c07425