High Photoresponsivity in Graphene Nanoribbon Field-Effect Transistor Devices Contacted with Graphene Electrodes

Ultranarrow graphene nanoribbons (GNRs) with atomically precise structures are considered a promising class of materials for the realization of optoelectronic and photonic devices with improved functionalities. Here we report the optoelectronic characterization of a field-effect transistor device ma...

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Bibliographic Details
Published in:Journal of physical chemistry. C 2017-05, Vol.121 (19), p.10620-10625
Main Authors: Candini, Andrea, Martini, Leonardo, Chen, Zongping, Mishra, Neeraj, Convertino, Domenica, Coletti, Camilla, Narita, Akimitsu, Feng, Xinliang, Müllen, Klaus, Affronte, Marco
Format: Article
Language:English
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Summary:Ultranarrow graphene nanoribbons (GNRs) with atomically precise structures are considered a promising class of materials for the realization of optoelectronic and photonic devices with improved functionalities. Here we report the optoelectronic characterization of a field-effect transistor device made of a layer of bottom-up synthesized GNRs contacted with multilayer graphene electrodes, showing high photoresponsivity of 5 × 105 A/W for small incident power in the visible–UV range. Our results show that combining the properties of intrinsic graphene with that of semiconducting GNRs is a viable route to realize novel devices for optoelectronic and sensing applications.
ISSN:1932-7447
1932-7455
DOI:10.1021/acs.jpcc.7b03401