Initial Growth of Pentacene Thin Film on Si(001) Substrate

• Published in: Journal of physical chemistry. C 2019-02, Vol.123 (5), p.2996-3003
• Main Authors: Suzuki, T, Yagyu, K, Tochihara, H
• Format: Article
• Language: English
• ISSN: 1932-7447; 1932-7455
• DOI: 10.1021/acs.jpcc.8b11238

Initial growth process of pentacene molecules on clean Si(001)-2 × 1 substrate was investigated by scanning tunneling microscopy. It is found that the wetting layer, which is not crystalline but disordered, forms before the growth of a first crystalline layer. The wetting layer consists of double layer of the flatly adsorbed pentacene molecules. The formation of the wetting double layer is discussed. The first crystalline layer that is grown on the disordered wetting layer with standing-up pentacene molecules consists of some domains that differ in their crystal structures. Among them, a new pentacene crystal structure is found that can form only on the first layer. In contrast, the second crystalline layer has only single domain. Moreover, we investigated the electronic properties of the pentacene layers by the current–voltage measurements. The pentacene layers are semiconducting with a band gap of about 4 eV.