Ambipolar Seebeck Coefficient in MoS 2 /MoS 2 -MoO 2 Graded Composites by Junction Reciprocation

We fabricated radially transformed growth of MoS to MoS -MoO by the two-zone chemical vapor transport (CVT) technique. The idea to apply heat, i.e., hot junction ( ), on both the edges of the film has a distinct ambipolar Seebeck coefficient ( ) of -20 μVK with MoS as hot junction, and 69.5 μVK with...

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Bibliographic Details
Published in:The journal of physical chemistry letters 2024-12, Vol.15 (49), p.12060-12067
Main Authors: Rengarajan, Abinaya, Khaja Peer, Mohamed Jibri, Santhana Krishnan, Harish, Suruttaiya Udaiyar, Ponnusamy, Jayaram, Archana, Mani, Navaneethan
Format: Article
Language:English
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Summary:We fabricated radially transformed growth of MoS to MoS -MoO by the two-zone chemical vapor transport (CVT) technique. The idea to apply heat, i.e., hot junction ( ), on both the edges of the film has a distinct ambipolar Seebeck coefficient ( ) of -20 μVK with MoS as hot junction, and 69.5 μVK with MoS -MoO as hot junction. The positive at MoS -MoO indicates fast hole injection at a lower degree of interface Fermi-level pinning and large asymmetry at the junctions through low energy carrier scattering in the multiple potential barriers at the interfaces of each region. The decreased Θ around 5 K than MoS reveals the lattice softening due to reduced strength of chemical bonding at MoS -MoO . The report propounds the potential utilization of multiple potential barriers for thin film graded composites in thermoelectric applications.
ISSN:1948-7185
1948-7185
DOI:10.1021/acs.jpclett.4c01559