Correlation of Coexistent Charge Transfer States in F 4 TCNQ-Doped P3HT with Microstructure

Understanding the interaction between organic semiconductors (OSCs) and dopants in thin films is critical for device optimization. The proclivity of a doped OSC to form free charges is predicated on the chemical and electronic interactions that occur between dopant and host. To date, doping has been...

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Published in:The journal of physical chemistry letters 2018-12, Vol.9 (23), p.6871-6877
Main Authors: Neelamraju, Bharati, Watts, Kristen E, Pemberton, Jeanne E, Ratcliff, Erin L
Format: Article
Language:English
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Summary:Understanding the interaction between organic semiconductors (OSCs) and dopants in thin films is critical for device optimization. The proclivity of a doped OSC to form free charges is predicated on the chemical and electronic interactions that occur between dopant and host. To date, doping has been assumed to occur via one of two mechanistic pathways: an integer charge transfer (ICT) between the OSC and dopant or hybridization of the frontier orbitals of both molecules to form a partial charge transfer complex (CPX). Using a combination of spectroscopies, we demonstrate that CPX and ICT states are present simultaneously in F TCNQ-doped P3HT films and that the nature of the charge transfer interaction is strongly dependent on the local energetic environment. Our results suggest a multiphase model, where the local charge transfer mechanism is defined by the electronic driving force, governed by local microstructure in regioregular and regiorandom P3HT.
ISSN:1948-7185
1948-7185
DOI:10.1021/acs.jpclett.8b03104