Direct Growth of Continuous and Uniform MoS 2 Film on SiO 2 /Si Substrate Catalyzed by Sodium Sulfate

• Published in: The journal of physical chemistry letters 2020-02, Vol.11 (4), p.1570-1577
• Main Authors: Li, Guanmeng, Wang, Xiaoli, Han, Bo, Zhang, Weifeng, Qi, Shuyan, Zhang, Yan, Qiu, Jiakang, Gao, Peng, Guo, Shaoshi, Long, Run, Tan, Zhenquan, Song, Xue-Zhi, Liu, Nan
• Format: Article
• Language: English
• ISSN: 1948-7185; 1948-7185
• DOI: 10.1021/acs.jpclett.9b03879

Because of its unique electronic band structure, molybdenum disulfide (MoS ) has been regarded as a star semiconducting material. However, direct growth of continuous and high-quality MoS films on SiO /Si substrates is still very challenging. Here, we report a facile chemical vapor deposition (CVD) method based on synergistic modulation of precursor and Na SO catalysis, realizing the centimeter scale growth of a continuous MoS film on SiO /Si substrates. The as-grown MoS film had an excellent spatial homogeneity and crystal quality, with an edge length of the composite domain as large as 632 μm. Both experimental and theoretical results proved that Na tended to bond with SiO substrates rather than to interfere with as-grown MoS . Thus, they showed decent and uniform electrical performance, with electron mobilities as high as 5.9 cm V s We believe our method will pave a new way for MoS toward real application in modern electronics.