Tailored Langmuir-Schaefer Deposition of Few-Layer MoS 2 Nanosheet Films for Electronic Applications

• Published in: Langmuir 2019-07, Vol.35 (30), p.9802-9808
• Main Authors: Kalosi, Anna, Demydenko, Maksym, Bodik, Michal, Hagara, Jakub, Kotlar, Mario, Kostiuk, Dmytro, Halahovets, Yuriy, Vegso, Karol, Marin Roldan, Alicia, Maurya, Gulab Singh, Angus, Michal, Veis, Pavel, Jergel, Matej, Majkova, Eva, Siffalovic, Peter
• Format: Article
• Language: English
• ISSN: 0743-7463; 1520-5827
• DOI: 10.1021/acs.langmuir.9b01000

Few-layer MoS films stay at the forefront of current research of two-dimensional materials. At present, continuous MoS films are prepared by chemical vapor deposition (CVD) techniques. Herein, we present a cost-effective fabrication of the large-area spatially uniform films of few-layer MoS flakes using a modified Langmuir-Schaefer technique. The compression of the liquid-phase exfoliated MoS flakes on the water subphase was used to form a continuous layer, which was subsequently transferred onto a submerged substrate by removing the subphase. After vacuum annealing, the electrical sheet resistance dropped to a level of 10 kΩ/sq, being highly competitive with that of CVD deposited MoS nanosheet films. In addition, a consistent fabrication protocol of the large-area conductive MoS films was established. The morphology and electrical properties predetermine these films to advanced detecting, sensing and catalytic applications. A large number of experimental techniques were used to characterize the exfoliated few-layer MoS2 flakes and to elucidate the formation of few-layer MoS Langmuir film.