Gate-Switchable Arrays of Quantum Light Emitters in Contacted Monolayer MoS 2 van der Waals Heterodevices

We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS van der Waals heterodevices. We contact monolayers of MoS in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom...

Full description

Saved in:
Bibliographic Details
Published in:Nano letters 2021-01, Vol.21 (2), p.1040-1046
Main Authors: Hötger, Alexander, Klein, Julian, Barthelmi, Katja, Sigl, Lukas, Sigger, Florian, Männer, Wolfgang, Gyger, Samuel, Florian, Matthias, Lorke, Michael, Jahnke, Frank, Taniguchi, Takashi, Watanabe, Kenji, Jöns, Klaus D, Wurstbauer, Ursula, Kastl, Christoph, Müller, Kai, Finley, Jonathan J, Holleitner, Alexander W
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We demonstrate electrostatic switching of individual, site-selectively generated matrices of single photon emitters (SPEs) in MoS van der Waals heterodevices. We contact monolayers of MoS in field-effect devices with graphene gates and hexagonal boron nitride as the dielectric and graphite as bottom gates. After the assembly of such gate-tunable heterodevices, we demonstrate how arrays of defects, that serve as quantum emitters, can be site-selectively generated in the monolayer MoS by focused helium ion irradiation. The SPEs are sensitive to the charge carrier concentration in the MoS and switch on and off similar to the neutral exciton in MoS for moderate electron doping. The demonstrated scheme is a first step for producing scalable, gate-addressable, and gate-switchable arrays of quantum light emitters in MoS heterostacks.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.0c04222