Epitaxial Growth of Large Area Two-Dimensional Ferroelectric α-In 2 Se 3

Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferro...

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Bibliographic Details
Published in:Nano letters 2023-04, Vol.23 (7), p.3098-3105
Main Authors: He, Qinming, Tang, Zhiyuan, Dai, Minzhi, Shan, Huili, Yang, Hui, Zhang, Yi, Luo, Xin
Format: Article
Language:English
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Summary:Two-dimensional (2D) ferroelectric materials have attracted intensive attention in recent years for academic research. However, the synthesis of large-scale 2D ferroelectric materials for electronic applications is still challenging. Here, we report the successful synthesis of centimeter-scale ferroelectric In Se films by selenization of In O in a confined space chemical vapor deposition method. The as-grown homogeneous thin film has a uniform thickness of 5 nm with robust out-of-plane ferroelectricity at room temperature. Scanning transmission electron microscopy and Raman spectroscopy reveal that the thin film is 2H stacking α-In Se with excellent crystalline quality. Electronic transport measurements of In Se highlight the current-voltage hysteresis and polarization modulated diode effect due to the switchable Schottky barrier height (SBH). First-principles calculations reveal that the polarization modulated SBH is originated from the competition between interface charge transfer and polarized charge. The large area growth of epitaxial In Se opens up potential applications of In Se in novel nanoelectronics.
ISSN:1530-6984
1530-6992
DOI:10.1021/acs.nanolett.2c04289