Epitaxial Nanoflag Photonics: Semiconductor Nanoemitters Grown with Their Nanoantennas

• Published in: Nano letters 2017-10, Vol.17 (10), p.6011-6017
• Main Authors: Sorias, Ofir, Kelrich, Alexander, Gladstone, Ran, Ritter, Dan, Orenstein, Meir
• Format: Article
• Language: English
• ISSN: 1530-6984; 1530-6992
• DOI: 10.1021/acs.nanolett.7b02283

Semiconductor nanostructures are desirable for electronics, photonics, quantum circuitry, and energy conversion applications as well as for fundamental science. In photonics, optical nanoantennas mediate the large size difference between photons and semiconductor nanoemitters or detectors and hence are instrumental for exhibiting high efficiency. In this work we present epitaxially grown InP nanoflags as optically active nanostructures encapsulating the desired characteristics of a photonic emitter and an efficient epitaxial nanoantenna. We experimentally characterize the polarized and directional emission of the nanoflag–antenna and show the control of these properties by means of structure, dimensions, and constituents. We analyze field enhancement and light extraction by the semiconductor nanoflag antenna, which yield comparable values to enhancement factors of metallic plasmonic antennas. We incorporated quantum emitters within the nanoflag structure and characterized their emission properties. Merging of active nanoemitters with nanoantennas at a single growth process enables a new class of devices to be used in nanophotonics applications.