Self-Powered Ultra-Broadband and Flexible Photodetectors Based on the Bismuth Films by Vapor Deposition

Bismuth (Bi), as a topological semimetallic material, has received widespread attention on account of its fascinating properties. Here, Bi films were successfully grown through a direct and facile vapor deposition method on 300 nm SiO2/Si (SiO2) and polyimide (PI) substrates. The Bi films were utili...

Full description

Saved in:
Bibliographic Details
Published in:ACS applied electronic materials 2020-05, Vol.2 (5), p.1254-1262
Main Authors: Zhou, Qianqi, Lu, Donglin, Tang, Han, Luo, Siwei, Li, Zhenqing, Li, Hongxing, Qi, Xiang, Zhong, Jianxin
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-a277t-b63932c2133c3d344bb2c3eb35f07bf67a8598393a3c880f9386a67eccb716f63
cites cdi_FETCH-LOGICAL-a277t-b63932c2133c3d344bb2c3eb35f07bf67a8598393a3c880f9386a67eccb716f63
container_end_page 1262
container_issue 5
container_start_page 1254
container_title ACS applied electronic materials
container_volume 2
creator Zhou, Qianqi
Lu, Donglin
Tang, Han
Luo, Siwei
Li, Zhenqing
Li, Hongxing
Qi, Xiang
Zhong, Jianxin
description Bismuth (Bi), as a topological semimetallic material, has received widespread attention on account of its fascinating properties. Here, Bi films were successfully grown through a direct and facile vapor deposition method on 300 nm SiO2/Si (SiO2) and polyimide (PI) substrates. The Bi films were utilized further to fabricate rigid and flexible photodetectors. The rigid photodetector based on Bi/SiO2 shows fast, highly stable, self-powered, and ultra-broadband photoresponses. The flexible Bi/PI photodetector exhibits durability and reproducibility in photoresponse behaviors under bending with various curvature radii and after hundreds of bending cycles. Our results demonstrated that the Bi films by vapor deposition have great application potentials in the next generation of optoelectronic devices.
doi_str_mv 10.1021/acsaelm.0c00058
format article
fullrecord <record><control><sourceid>acs_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_acsaelm_0c00058</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>a89312682</sourcerecordid><originalsourceid>FETCH-LOGICAL-a277t-b63932c2133c3d344bb2c3eb35f07bf67a8598393a3c880f9386a67eccb716f63</originalsourceid><addsrcrecordid>eNp1kE1LAzEQhoMoWGrPXnOXbfPRTbZHW90qFCxovS5JdmK3ZDclSdH-e7e0By8ehhmY5x2GB6F7SsaUMDpRJipw7ZgYQkheXKEBE1xmglJ-_We-RaMYdz3CKJuynA7Q1zs4m639NwSo8caloLJ58KrWqqvxqUoHP412gNdbn3wNCUzyIeK5in3CdzhtAc-b2B7SFpeNayPWR_yp9j7gJ9j72KTGd3foxioXYXTpQ7Qpnz8WL9nqbfm6eFxlikmZMi34jDPDKOeG13w61ZoZDprnlkhthVRFPit6RnFTFMTOeCGUkGCMllRYwYdocr5rgo8xgK32oWlVOFaUVCdV1UVVdVHVJx7OiX5R7fwhdP1__9K_rS9spw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Self-Powered Ultra-Broadband and Flexible Photodetectors Based on the Bismuth Films by Vapor Deposition</title><source>American Chemical Society:Jisc Collections:American Chemical Society Read &amp; Publish Agreement 2022-2024 (Reading list)</source><creator>Zhou, Qianqi ; Lu, Donglin ; Tang, Han ; Luo, Siwei ; Li, Zhenqing ; Li, Hongxing ; Qi, Xiang ; Zhong, Jianxin</creator><creatorcontrib>Zhou, Qianqi ; Lu, Donglin ; Tang, Han ; Luo, Siwei ; Li, Zhenqing ; Li, Hongxing ; Qi, Xiang ; Zhong, Jianxin</creatorcontrib><description>Bismuth (Bi), as a topological semimetallic material, has received widespread attention on account of its fascinating properties. Here, Bi films were successfully grown through a direct and facile vapor deposition method on 300 nm SiO2/Si (SiO2) and polyimide (PI) substrates. The Bi films were utilized further to fabricate rigid and flexible photodetectors. The rigid photodetector based on Bi/SiO2 shows fast, highly stable, self-powered, and ultra-broadband photoresponses. The flexible Bi/PI photodetector exhibits durability and reproducibility in photoresponse behaviors under bending with various curvature radii and after hundreds of bending cycles. Our results demonstrated that the Bi films by vapor deposition have great application potentials in the next generation of optoelectronic devices.</description><identifier>ISSN: 2637-6113</identifier><identifier>EISSN: 2637-6113</identifier><identifier>DOI: 10.1021/acsaelm.0c00058</identifier><language>eng</language><publisher>American Chemical Society</publisher><ispartof>ACS applied electronic materials, 2020-05, Vol.2 (5), p.1254-1262</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-a277t-b63932c2133c3d344bb2c3eb35f07bf67a8598393a3c880f9386a67eccb716f63</citedby><cites>FETCH-LOGICAL-a277t-b63932c2133c3d344bb2c3eb35f07bf67a8598393a3c880f9386a67eccb716f63</cites><orcidid>0000-0002-0191-8222 ; 0000-0002-0155-2558</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,776,780,27903,27904</link.rule.ids></links><search><creatorcontrib>Zhou, Qianqi</creatorcontrib><creatorcontrib>Lu, Donglin</creatorcontrib><creatorcontrib>Tang, Han</creatorcontrib><creatorcontrib>Luo, Siwei</creatorcontrib><creatorcontrib>Li, Zhenqing</creatorcontrib><creatorcontrib>Li, Hongxing</creatorcontrib><creatorcontrib>Qi, Xiang</creatorcontrib><creatorcontrib>Zhong, Jianxin</creatorcontrib><title>Self-Powered Ultra-Broadband and Flexible Photodetectors Based on the Bismuth Films by Vapor Deposition</title><title>ACS applied electronic materials</title><addtitle>ACS Appl. Electron. Mater</addtitle><description>Bismuth (Bi), as a topological semimetallic material, has received widespread attention on account of its fascinating properties. Here, Bi films were successfully grown through a direct and facile vapor deposition method on 300 nm SiO2/Si (SiO2) and polyimide (PI) substrates. The Bi films were utilized further to fabricate rigid and flexible photodetectors. The rigid photodetector based on Bi/SiO2 shows fast, highly stable, self-powered, and ultra-broadband photoresponses. The flexible Bi/PI photodetector exhibits durability and reproducibility in photoresponse behaviors under bending with various curvature radii and after hundreds of bending cycles. Our results demonstrated that the Bi films by vapor deposition have great application potentials in the next generation of optoelectronic devices.</description><issn>2637-6113</issn><issn>2637-6113</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2020</creationdate><recordtype>article</recordtype><recordid>eNp1kE1LAzEQhoMoWGrPXnOXbfPRTbZHW90qFCxovS5JdmK3ZDclSdH-e7e0By8ehhmY5x2GB6F7SsaUMDpRJipw7ZgYQkheXKEBE1xmglJ-_We-RaMYdz3CKJuynA7Q1zs4m639NwSo8caloLJ58KrWqqvxqUoHP412gNdbn3wNCUzyIeK5in3CdzhtAc-b2B7SFpeNayPWR_yp9j7gJ9j72KTGd3foxioXYXTpQ7Qpnz8WL9nqbfm6eFxlikmZMi34jDPDKOeG13w61ZoZDprnlkhthVRFPit6RnFTFMTOeCGUkGCMllRYwYdocr5rgo8xgK32oWlVOFaUVCdV1UVVdVHVJx7OiX5R7fwhdP1__9K_rS9spw</recordid><startdate>20200526</startdate><enddate>20200526</enddate><creator>Zhou, Qianqi</creator><creator>Lu, Donglin</creator><creator>Tang, Han</creator><creator>Luo, Siwei</creator><creator>Li, Zhenqing</creator><creator>Li, Hongxing</creator><creator>Qi, Xiang</creator><creator>Zhong, Jianxin</creator><general>American Chemical Society</general><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0002-0191-8222</orcidid><orcidid>https://orcid.org/0000-0002-0155-2558</orcidid></search><sort><creationdate>20200526</creationdate><title>Self-Powered Ultra-Broadband and Flexible Photodetectors Based on the Bismuth Films by Vapor Deposition</title><author>Zhou, Qianqi ; Lu, Donglin ; Tang, Han ; Luo, Siwei ; Li, Zhenqing ; Li, Hongxing ; Qi, Xiang ; Zhong, Jianxin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-a277t-b63932c2133c3d344bb2c3eb35f07bf67a8598393a3c880f9386a67eccb716f63</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2020</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Qianqi</creatorcontrib><creatorcontrib>Lu, Donglin</creatorcontrib><creatorcontrib>Tang, Han</creatorcontrib><creatorcontrib>Luo, Siwei</creatorcontrib><creatorcontrib>Li, Zhenqing</creatorcontrib><creatorcontrib>Li, Hongxing</creatorcontrib><creatorcontrib>Qi, Xiang</creatorcontrib><creatorcontrib>Zhong, Jianxin</creatorcontrib><collection>CrossRef</collection><jtitle>ACS applied electronic materials</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Qianqi</au><au>Lu, Donglin</au><au>Tang, Han</au><au>Luo, Siwei</au><au>Li, Zhenqing</au><au>Li, Hongxing</au><au>Qi, Xiang</au><au>Zhong, Jianxin</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Self-Powered Ultra-Broadband and Flexible Photodetectors Based on the Bismuth Films by Vapor Deposition</atitle><jtitle>ACS applied electronic materials</jtitle><addtitle>ACS Appl. Electron. Mater</addtitle><date>2020-05-26</date><risdate>2020</risdate><volume>2</volume><issue>5</issue><spage>1254</spage><epage>1262</epage><pages>1254-1262</pages><issn>2637-6113</issn><eissn>2637-6113</eissn><abstract>Bismuth (Bi), as a topological semimetallic material, has received widespread attention on account of its fascinating properties. Here, Bi films were successfully grown through a direct and facile vapor deposition method on 300 nm SiO2/Si (SiO2) and polyimide (PI) substrates. The Bi films were utilized further to fabricate rigid and flexible photodetectors. The rigid photodetector based on Bi/SiO2 shows fast, highly stable, self-powered, and ultra-broadband photoresponses. The flexible Bi/PI photodetector exhibits durability and reproducibility in photoresponse behaviors under bending with various curvature radii and after hundreds of bending cycles. Our results demonstrated that the Bi films by vapor deposition have great application potentials in the next generation of optoelectronic devices.</abstract><pub>American Chemical Society</pub><doi>10.1021/acsaelm.0c00058</doi><tpages>9</tpages><orcidid>https://orcid.org/0000-0002-0191-8222</orcidid><orcidid>https://orcid.org/0000-0002-0155-2558</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 2637-6113
ispartof ACS applied electronic materials, 2020-05, Vol.2 (5), p.1254-1262
issn 2637-6113
2637-6113
language eng
recordid cdi_crossref_primary_10_1021_acsaelm_0c00058
source American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list)
title Self-Powered Ultra-Broadband and Flexible Photodetectors Based on the Bismuth Films by Vapor Deposition
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-22T12%3A17%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-acs_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Self-Powered%20Ultra-Broadband%20and%20Flexible%20Photodetectors%20Based%20on%20the%20Bismuth%20Films%20by%20Vapor%20Deposition&rft.jtitle=ACS%20applied%20electronic%20materials&rft.au=Zhou,%20Qianqi&rft.date=2020-05-26&rft.volume=2&rft.issue=5&rft.spage=1254&rft.epage=1262&rft.pages=1254-1262&rft.issn=2637-6113&rft.eissn=2637-6113&rft_id=info:doi/10.1021/acsaelm.0c00058&rft_dat=%3Cacs_cross%3Ea89312682%3C/acs_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-a277t-b63932c2133c3d344bb2c3eb35f07bf67a8598393a3c880f9386a67eccb716f63%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true