Snapshots of Ambient Aging in 2D-Layered GaSe

Ambient aging has substantially hindered the development of electronic and optoelectronic devices made of two-dimensional (2D) semiconducting layered materials because the origin of oxidation, degradation, and aging effects remains largely unexplored. This study unveils the mechanism and process of...

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Bibliographic Details
Published in:ACS applied electronic materials 2022-06, Vol.4 (6), p.3049-3055
Main Authors: Hong, Tz-Ju, Chen, Yu-Xun, Quyen, Nguyen Nhat, Chen, Yu-Han, Chen, Cheng-Hsing, Huang, Bang-Hao, Chen, Jiann-Yeu, Ho, Mon-Shu, Juang, Jenh-Yih, Chen, Chia-Hao, Luo, Chih-Wei
Format: Article
Language:English
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Summary:Ambient aging has substantially hindered the development of electronic and optoelectronic devices made of two-dimensional (2D) semiconducting layered materials because the origin of oxidation, degradation, and aging effects remains largely unexplored. This study unveils the mechanism and process of ambient aging in 2D-layered GaSe crystals by exploring the evolution of the ambient aging process in a snapshot fashion. Through the detailed examinations on surface morphology, lattice structure, and elemental compositions, three major stages of the aging process in GaSe crystals are identified: the formation of a defective GaSe top layer, a crystalline Ga2Se3 layer, and an amorphous Ga2O3 layer evolving on top of the Ga2Se3 layer. In particular, it is suggestive that the formation of the crystalline Ga2Se3 layer plays a crucial role in the entire oxidation process. The present results may be also applicable to other 2D semiconducting layered materials.
ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.2c00468