Integration of ZnO-Based Resistive-Switching Memory and Ge 2 Sb 2 Te 5 -Based Phase-Change Memory

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Bibliographic Details
Published in:ACS applied electronic materials 2023-05, Vol.5 (5), p.2583-2589
Main Authors: Chen, Chih-Ying, Feng, Yu-Hsiu, Lu, Hong-Lin, Chang, Feng-En, Chen, Jui-Yuan
Format: Article
Language:English
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ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.3c00064