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Integration of ZnO-Based Resistive-Switching Memory and Ge 2 Sb 2 Te 5 -Based Phase-Change Memory
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Published in: | ACS applied electronic materials 2023-05, Vol.5 (5), p.2583-2589 |
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Language: | English |
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container_end_page | 2589 |
container_issue | 5 |
container_start_page | 2583 |
container_title | ACS applied electronic materials |
container_volume | 5 |
creator | Chen, Chih-Ying Feng, Yu-Hsiu Lu, Hong-Lin Chang, Feng-En Chen, Jui-Yuan |
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doi_str_mv | 10.1021/acsaelm.3c00064 |
format | article |
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source | American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list) |
title | Integration of ZnO-Based Resistive-Switching Memory and Ge 2 Sb 2 Te 5 -Based Phase-Change Memory |
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