Electronic Transport Evidence for Topological Nodal-Line Semimetals of ZrGeSe Single Crystals

• Published in: ACS applied electronic materials 2019-06, Vol.1 (6), p.869-876
• Main Authors: Guo, Lei, Chen, Ting-Wei, Chen, Chen, Chen, Lei, Zhang, Yang, Gao, Guan-Yin, Yang, Jie, Li, Xiao-Guang, Zhao, Wei-Yao, Dong, Shuai, Zheng, Ren-Kui
• Format: Article
• Language: English
• ISSN: 2637-6113; 2637-6113
• DOI: 10.1021/acsaelm.9b00061

Although the band topology of ZrGeSe has been studied via the magnetic torque technique, the electronic transport behaviors related to the relativistic fermions in ZrGeSe are still unknown. Here, we first report systematic electronic transport properties of high-quality ZrGeSe single crystals under magnetic fields up to 14 T. Resistivity plateaus of temperature-dependent resistivity curves in both the presence and absence of magnetic fields as well as large, nonsaturating magnetoresistance in the low-temperature region were observed. By analyzing the temperature- and angular-dependent Shubnikov–de Haas oscillations and fitting it via the Lifshitz–Kosevich (LK) formula with the Berry phase being taken into account, we proved that Dirac fermions dominate the electronic transport behaviors of ZrGeSe and the presence of the nontrivial Berry phase. First-principles calculations demonstrate that ZrGeSe possesses Dirac bands and normal bands near Fermi surface, resulting in the observed magnetotransport phenomena. These results demonstrate that ZrGeSe is a topological nodal-line semimetal, which provides a fundamentally important platform to study the quantum physics of topological semimetals.