n‑Type Organic Field-Effect Transistors Based on Bisthienoisatin Derivatives

Bisthienoisatins (BTI-R with R = n-propyl, n-hexyl, and 2-ethylhexyl) and the dicyanomethylene derivatives (BTICN-R) are prepared, and the thin-film transistors are investigated. The crystals have uniform stacking structures, but the packing pattern of the stacks varies depending on the alkyl chains...

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Bibliographic Details
Published in:ACS applied electronic materials 2019-05, Vol.1 (5), p.764-771
Main Authors: Yoo, Dongho, Luo, Xuyi, Hasegawa, Tsukasa, Ashizawa, Minoru, Kawamoto, Tadashi, Masunaga, Hiroyasu, Ohta, Noboru, Matsumoto, Hidetoshi, Mei, Jianguo, Mori, Takehiko
Format: Article
Language:English
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Summary:Bisthienoisatins (BTI-R with R = n-propyl, n-hexyl, and 2-ethylhexyl) and the dicyanomethylene derivatives (BTICN-R) are prepared, and the thin-film transistors are investigated. The crystals have uniform stacking structures, but the packing pattern of the stacks varies depending on the alkyl chains. These materials show n-type transistor properties, and BTICNs exhibit greater performance than BTIs in general. In particular, BTICN-EH shows the maximum electron mobility exceeding 0.2 cm2 V–1 s–1.
ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.9b00105