Realization of Large Area Co 20 Fe 60 B 20 -Based Perpendicular Magnetic Tunnel Junction for CMOS Compatible Device Application

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Bibliographic Details
Published in:ACS applied electronic materials 2019-11, Vol.1 (11), p.2268-2278
Main Authors: Moinuddin, Mohamad G., Lone, Aijaz H., Srinivasan, Srikant, Sharma, Satinder K.
Format: Article
Language:English
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ISSN:2637-6113
2637-6113
DOI:10.1021/acsaelm.9b00469