Influence of Carrier Density and Energy Barrier Scattering on a High Seebeck Coefficient and Power Factor in Transparent Thermoelectric Copper Iodide

• Published in: ACS applied energy materials 2020-10, Vol.3 (10), p.10037-10044
• Main Authors: Murmu, Peter P, Karthik, Varun, Liu, Zihang, Jovic, Vedran, Mori, Takao, Yang, Wanli L, Smith, Kevin E, Kennedy, John V
• Format: Article
• Language: English
• ISSN: 2574-0962; 2574-0962
• DOI: 10.1021/acsaem.0c01724

Transparent thermoelectric materials offer a synergetic performance for energy harvesting as smart windows. Among them, p-type copper iodide (CuI) is preferred due to its low synthesis temperature, moderate conductivity and mobility, and high optical transparency. X-ray absorption spectroscopy results showed a pre-edge feature in the Cu 2p3/2 spectrum, which suggested the presence of Cu0-like defect states in γ-CuI films. Interface and grain boundaries of CuI and Cu0 act as a potential energy barrier for energy filtering of charge carriers, which along with the decrease in charge carrier density enhanced the Seebeck coefficient, α. The α value increased by 298% upon annealing at 100 °C, α = 789.5 μVK–1, which resulted in a 480% increase in the power factor (α2σ = 740.9 μWm–1 K–2). Our results showed that a high Seebeck coefficient resulted from a decrease in charge carrier density and energy filtering of charge carriers at the interface and grain boundaries in optically transparent (T visible ∼ 60–85%) γ-CuI films for energy harvesting as smart windows.