Exploring the Role of Graphene Oxide as a Co-Catalyst in the CZTS Photocathodes for Improved Photoelectrochemical Properties

• Published in: ACS applied energy materials 2022-06, Vol.5 (6), p.7538-7549
• Main Authors: Vishwakarma, Manoj, Batra, Yogita, Hadermann, Joke, Singh, Aditya, Ghosh, Abhishek, Mehta, B. R.
• Format: Article
• Language: English
• ISSN: 2574-0962; 2574-0962
• DOI: 10.1021/acsaem.2c01011

The hydrogen evolution properties of CZTS heterostructure photocathodes are reported with graphene oxide (GO) as a co-catalyst layer coated by a drop-cast method and an Al2O3 protection layer fabricated using atomic layer deposition. In the CZTS absorber, a minor deviation from stoichiometry across the cross section of the thin film results in nanoscale growth of spurious phases, but the kesterite phase remains the dominant phase. We have investigated the band alignment parameters such as the band gap, work function, and Fermi level position that are crucial for making kesterite-based heterostructure devices. The photocurrent density in the photocathode CZTS/CdS/ZnO is found to be improved to −4.71 mA·cm–2 at −0.40 VRHE, which is 3 times that of the pure CZTS. This enhanced photoresponse can be attributed to faster carrier separation at p–n junction regions driven by upward band bending at CZTS grain boundaries and the ZnO layer. GO as a co-catalyst over the heterostructure photocathode significantly improves the photocurrent density to −6.14 mA·cm–2 at −0.40 VRHE by effective charge migration in the CZTS/CdS/ZnO/GO configuration, but the onset potential shifts only after application of the Al2O3 protection layer. Significant photocurrents of −29 mA·cm–2 at −0.40 VRHE and −8 mA·cm–2 at 0 VRHE are observed, with an onset potential of 0.7 VRHE in CZTS/CdS/ZnO/GO/Al2O3. The heterostructure configuration and the GO co-catalyst reduce the charge-transfer resistance, while the Al2O3 top layer provides a stable photocurrent for a prolonged time (∼16 h). The GO co-catalyst increases the flat band potential from 0.26 to 0.46 VRHE in CZTS/CdS/ZnO/GO, which supports the bias-induced band bending at the electrolyte–electrode interface.