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Excitonic Rydberg States in a Trilayer to Monolayer H 2 -Aided CVD-Grown Large-Area MoS 2 Film with Excellent UV to Visible Broad Band Photodetection Applications
The diverse nature of optoelectronic properties of few-layer or monolayer MoS is generally dominated by A and B excitons. Occasionally, strong Coulombic interactions within the 2D monolayer led to the creation of hydrogen-like Rydberg states of excitons in MoS similar to other 2D monolayers. In this...
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Published in: | ACS applied materials & interfaces 2024-01, Vol.16 (2), p.2940-2953 |
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Main Authors: | , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The diverse nature of optoelectronic properties of few-layer or monolayer MoS
is generally dominated by A and B excitons. Occasionally, strong Coulombic interactions within the 2D monolayer led to the creation of hydrogen-like Rydberg states of excitons in MoS
similar to other 2D monolayers. In this paper, a simple process is used to convert trilayer MoS
films to a monolayer by introducing H
gas during chemical vapor deposition. Remarkably, alongside the usual A, B excitons, and A
trion, the appearance of the Rydberg states is evidenced by photoluminescence spectra even at room temperature; also, there is an increase in their areal percentage with an increase in H
content. The s-type excited Rydberg states up to the fourth order (
= 5) and third order (
= 4) of A and B excitons, respectively, have been probed from the photoluminescence spectra at 93 K. Unprecedentedly, the first-order derivative of room-temperature photocurrent spectrum reveals the Rydberg states concurrently and elaboratively. Furthermore, the large-area MoS
films exhibit photoresponse in a broad UV to visible region with excellent photosensitivity (∼10
) toward both UV and visible lights. Not only does this provide a profound understanding of the excitonic Rydberg states but also highlights the considerable potential of large-area monolayer MoS
overcoming the difficulty of tiny flake-related 2D device endeavors. |
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ISSN: | 1944-8244 1944-8252 |
DOI: | 10.1021/acsami.3c15655 |