Large-Area Growth of High-Optical-Quality MoSe 2 /hBN Heterostructures with Tunable Charge Carrier Concentration

• Published in: ACS applied materials & interfaces 2024-09, Vol.16 (37), p.49701-49710
• Main Authors: Ludwiczak, Katarzyna, Da Browska, Aleksandra Krystyna, Kucharek, Julia, Rogoża, Jakub, Tokarczyk, Mateusz, Bożek, Rafał, Gryglas-Borysiewicz, Marta, Taniguchi, Takashi, Watanabe, Kenji, Binder, Johannes, Pacuski, Wojciech, Wysmołek, Andrzej
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.4c12559

Van der Waals heterostructures open up vast possibilities for applications in optoelectronics, especially since it was recognized that the optical properties of transition-metal dichalcogenides (TMDC) can be enhanced by adjacent hBN layers. However, although many micrometer-sized structures have been fabricated, the bottleneck for applications remains the lack of large-area structures with electrically tunable photoluminescence emission. In this study, we demonstrate the electrical charge carrier tuning for large-area epitaxial MoSe grown directly on epitaxial hBN. The structure is produced in a multistep procedure involving Metalorganic Vapor Phase Epitaxy (MOVPE) growth of large-area hBN, a wet transfer of hBN onto a SiO /Si substrate, and the subsequent Molecular Beam Epitaxy (MBE) growth of monolayer MoSe . The electrically induced change of the carrier concentration is deduced from the evolution of well-resolved charged and neutral exciton intensities. Our findings show that it is feasible to grow large-area, electrically addressable, high-optical-quality van der Waals heterostructures.