Performance and Stability Enhancement of In-Sn-Zn-O TFTs Using SiO 2 Gate Dielectrics Grown by Low Temperature Atomic Layer Deposition

• Published in: ACS applied materials & interfaces 2017-12, Vol.9 (49), p.42928-42934
• Main Authors: Sheng, Jiazhen, Han, Ju-Hwan, Choi, Wan-Ho, Park, Jozeph, Park, Jin-Seong
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.7b15419

Silicon dioxide (SiO ) films were synthesized by plasma-enhanced atomic layer deposition (PEALD) using BTBAS [bis(tertiarybutylamino) silane] as the precursor and O plasma as the reactant, at a temperature range from 50 to 200 °C. While dielectric constant values larger than 3.7 are obtained at all deposition temperatures, the leakage current levels are drastically reduced to below 10 A at temperatures above 150 °C, which are similar to those obtained in thermally oxidized and PECVD grown SiO . Thin film transistors (TFTs) based on In-Sn-Zn-O (ITZO) semiconductors were fabricated using thermal SiO , PECVD SiO , and PEALD SiO grown at 150 °C as the gate dielectrics, and superior device performance and stability are observed in the last case. A linear field effect mobility of 68.5 cm /(V s) and a net threshold voltage shift (ΔV ) of approximately 1.2 V under positive bias stress (PBS) are obtained using the PEALD SiO as the gate insulator. The relatively high concentration of hydrogen in the PEALD SiO is suggested to induce a high carrier density in the ITZO layer deposited onto it, which results in enhanced charge transport properties. Also, it is most likely that the hydrogen atoms have passivated the electron traps related to interstitial oxygen defects, thus resulting in improved stability under PBS. Although the PECVD SiO contains a hydrogen concentration similar to that of PEALD SiO , its relatively large surface roughness appears to induce scattering effects and the generation of electron traps, which result in inferior device performance and stability.