Controlled Manipulation and Multiscale Modeling of Suspended Silicon Nanostructures under Site-Specific Ion Irradiation

• Published in: ACS applied materials & interfaces 2020-02, Vol.12 (5), p.6581-6589
• Main Authors: Garg, Vivek, Kamaliya, Bhaveshkumar, Singh, Ritesh Kumar, Panwar, Ajay Singh, Fu, Jing, Mote, Rakesh G
• Format: Article
• Language: English
• ISSN: 1944-8244; 1944-8252
• DOI: 10.1021/acsami.9b17941

In this work, controlled bidirectional deformation of suspended nanostructures by site-specific ion irradiation is presented. Multiscale modeling of the bidirectional deformation of nanostructures by site-specific ion irradiation is presented, incorporating molecular dynamics (MD) simulations together with finite element analysis, to substantiate the bending mechanism. Strain engineering of the free-standing nanostructure is employed for controlled deformation through site-specific kiloelectronvolt ion irradiation experimentally using a focused ion beam. We report the detailed bending mechanism of suspended silicon (Si) nanostructures through ion-induced irradiations. MD simulations are presented to understand the ion–solid interactions, defects formation in the silicon nanowire. The atomic-scale simulations reveal that the ion irradiation-induced bidirectional bending occurs through the development of localized tensile–compressive stresses in the lattice due to defect formation associated with atomic displacements. With an increasing ion dose, the evolution of localized tensile to compressive stress is observed, developing the alternate bending directions calculated through finite element analysis. The findings of multiscale modeling are in excellent agreement with the bidirectional nature of bending observed through the experiments. The developed in situ approach for bidirectional controlled manipulation of nanostructures in this work can be used for nanofabrication of numerous novel three-dimensional configurations and can provide a route toward functional nanostructures and devices.