The Intermetallic Semiconductor ht -IrGa 3 : a Material in the in-Transformation State

The compound IrGa was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group 4 , No. 136) with = 6.4623(1) Å and = 6.5688(2) Å and reveals strong disorder in...

Full description

Saved in:
Bibliographic Details
Published in:ACS Materials Au 2022-01, Vol.2 (1), p.45-54
Main Authors: Cardoso-Gil, Raúl, Zelenina, Iryna, Stahl, Quirin E, Bobnar, Matej, Koželj, Primož, Krnel, Mitja, Burkhardt, Ulrich, Veremchuk, Igor, Simon, Paul, Carrillo-Cabrera, Wilder, Boström, Magnus, Grin, Yuri
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c1239-cd7d095df10af1a9ae69fcc20e66e0acc054828d96c0be3de1b894a73c4a125b3
cites cdi_FETCH-LOGICAL-c1239-cd7d095df10af1a9ae69fcc20e66e0acc054828d96c0be3de1b894a73c4a125b3
container_end_page 54
container_issue 1
container_start_page 45
container_title ACS Materials Au
container_volume 2
creator Cardoso-Gil, Raúl
Zelenina, Iryna
Stahl, Quirin E
Bobnar, Matej
Koželj, Primož
Krnel, Mitja
Burkhardt, Ulrich
Veremchuk, Igor
Simon, Paul
Carrillo-Cabrera, Wilder
Boström, Magnus
Grin, Yuri
description The compound IrGa was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group 4 , No. 136) with = 6.4623(1) Å and = 6.5688(2) Å and reveals strong disorder in the crystal structure, reflected in the huge values and anisotropy of the atomic displacement parameters. A model for the real crystal structure of -IrGa is derived by the split-position approach from the single-crystal X-ray diffraction data and confirmed by an atomic-resolution transmission electron microscopy study. Temperature-dependent electrical resistivity measurements evidence semiconductor behavior with a band gap of 30 meV. A thermoelectric characterization was performed for -IrGa and for the solid solution IrGa Zn .
doi_str_mv 10.1021/acsmaterialsau.1c00025
format article
fullrecord <record><control><sourceid>pubmed_cross</sourceid><recordid>TN_cdi_crossref_primary_10_1021_acsmaterialsau_1c00025</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>36855699</sourcerecordid><originalsourceid>FETCH-LOGICAL-c1239-cd7d095df10af1a9ae69fcc20e66e0acc054828d96c0be3de1b894a73c4a125b3</originalsourceid><addsrcrecordid>eNpVkMtOwzAQRS0EolXpL1T-gRQ_EjdmhyookYpYNLCNJmNHNcqjspMFf0-gAcFqZnHPndEhZMXZmjPBbwFDA731DuoAw5ojY0wkF2QulI4jESt--WefkWUI798RLoUS12QmVZokSus5ecuPlmbtWNbYHuraIT3YxmHXmgH7ztNjT6PM74BKekeBPk93qWtpP6KujXIPbag6P77kupYe-jFyQ66q8Tm7nOaCvD4-5NunaP-yy7b3-wi5kDpCszFMJ6biDCoOGqzSFaJgVinLAJElcSpSoxWy0kpjeZnqGDYSY-AiKeWCqHMv-i4Eb6vi5F0D_qPgrPhyVfx3VUyuRnB1Bk9D2Vjzi_2YkZ_A32oJ</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>The Intermetallic Semiconductor ht -IrGa 3 : a Material in the in-Transformation State</title><source>NCBI_PubMed Central（免费）</source><source>American Chemical Society (ACS) Open Access</source><creator>Cardoso-Gil, Raúl ; Zelenina, Iryna ; Stahl, Quirin E ; Bobnar, Matej ; Koželj, Primož ; Krnel, Mitja ; Burkhardt, Ulrich ; Veremchuk, Igor ; Simon, Paul ; Carrillo-Cabrera, Wilder ; Boström, Magnus ; Grin, Yuri</creator><creatorcontrib>Cardoso-Gil, Raúl ; Zelenina, Iryna ; Stahl, Quirin E ; Bobnar, Matej ; Koželj, Primož ; Krnel, Mitja ; Burkhardt, Ulrich ; Veremchuk, Igor ; Simon, Paul ; Carrillo-Cabrera, Wilder ; Boström, Magnus ; Grin, Yuri</creatorcontrib><description>The compound IrGa was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group 4 , No. 136) with = 6.4623(1) Å and = 6.5688(2) Å and reveals strong disorder in the crystal structure, reflected in the huge values and anisotropy of the atomic displacement parameters. A model for the real crystal structure of -IrGa is derived by the split-position approach from the single-crystal X-ray diffraction data and confirmed by an atomic-resolution transmission electron microscopy study. Temperature-dependent electrical resistivity measurements evidence semiconductor behavior with a band gap of 30 meV. A thermoelectric characterization was performed for -IrGa and for the solid solution IrGa Zn .</description><identifier>ISSN: 2694-2461</identifier><identifier>EISSN: 2694-2461</identifier><identifier>DOI: 10.1021/acsmaterialsau.1c00025</identifier><identifier>PMID: 36855699</identifier><language>eng</language><publisher>United States</publisher><ispartof>ACS Materials Au, 2022-01, Vol.2 (1), p.45-54</ispartof><rights>2021 The Authors. Published by American Chemical Society.</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c1239-cd7d095df10af1a9ae69fcc20e66e0acc054828d96c0be3de1b894a73c4a125b3</citedby><cites>FETCH-LOGICAL-c1239-cd7d095df10af1a9ae69fcc20e66e0acc054828d96c0be3de1b894a73c4a125b3</cites><orcidid>0000-0003-1115-4024 ; 0000-0003-3891-9584 ; 0000-0003-1706-1910 ; 0000-0002-0748-981X</orcidid></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids><backlink>$$Uhttps://www.ncbi.nlm.nih.gov/pubmed/36855699$$D View this record in MEDLINE/PubMed$$Hfree_for_read</backlink></links><search><creatorcontrib>Cardoso-Gil, Raúl</creatorcontrib><creatorcontrib>Zelenina, Iryna</creatorcontrib><creatorcontrib>Stahl, Quirin E</creatorcontrib><creatorcontrib>Bobnar, Matej</creatorcontrib><creatorcontrib>Koželj, Primož</creatorcontrib><creatorcontrib>Krnel, Mitja</creatorcontrib><creatorcontrib>Burkhardt, Ulrich</creatorcontrib><creatorcontrib>Veremchuk, Igor</creatorcontrib><creatorcontrib>Simon, Paul</creatorcontrib><creatorcontrib>Carrillo-Cabrera, Wilder</creatorcontrib><creatorcontrib>Boström, Magnus</creatorcontrib><creatorcontrib>Grin, Yuri</creatorcontrib><title>The Intermetallic Semiconductor ht -IrGa 3 : a Material in the in-Transformation State</title><title>ACS Materials Au</title><addtitle>ACS Mater Au</addtitle><description>The compound IrGa was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group 4 , No. 136) with = 6.4623(1) Å and = 6.5688(2) Å and reveals strong disorder in the crystal structure, reflected in the huge values and anisotropy of the atomic displacement parameters. A model for the real crystal structure of -IrGa is derived by the split-position approach from the single-crystal X-ray diffraction data and confirmed by an atomic-resolution transmission electron microscopy study. Temperature-dependent electrical resistivity measurements evidence semiconductor behavior with a band gap of 30 meV. A thermoelectric characterization was performed for -IrGa and for the solid solution IrGa Zn .</description><issn>2694-2461</issn><issn>2694-2461</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2022</creationdate><recordtype>article</recordtype><recordid>eNpVkMtOwzAQRS0EolXpL1T-gRQ_EjdmhyookYpYNLCNJmNHNcqjspMFf0-gAcFqZnHPndEhZMXZmjPBbwFDA731DuoAw5ojY0wkF2QulI4jESt--WefkWUI798RLoUS12QmVZokSus5ecuPlmbtWNbYHuraIT3YxmHXmgH7ztNjT6PM74BKekeBPk93qWtpP6KujXIPbag6P77kupYe-jFyQ66q8Tm7nOaCvD4-5NunaP-yy7b3-wi5kDpCszFMJ6biDCoOGqzSFaJgVinLAJElcSpSoxWy0kpjeZnqGDYSY-AiKeWCqHMv-i4Eb6vi5F0D_qPgrPhyVfx3VUyuRnB1Bk9D2Vjzi_2YkZ_A32oJ</recordid><startdate>20220112</startdate><enddate>20220112</enddate><creator>Cardoso-Gil, Raúl</creator><creator>Zelenina, Iryna</creator><creator>Stahl, Quirin E</creator><creator>Bobnar, Matej</creator><creator>Koželj, Primož</creator><creator>Krnel, Mitja</creator><creator>Burkhardt, Ulrich</creator><creator>Veremchuk, Igor</creator><creator>Simon, Paul</creator><creator>Carrillo-Cabrera, Wilder</creator><creator>Boström, Magnus</creator><creator>Grin, Yuri</creator><scope>NPM</scope><scope>AAYXX</scope><scope>CITATION</scope><orcidid>https://orcid.org/0000-0003-1115-4024</orcidid><orcidid>https://orcid.org/0000-0003-3891-9584</orcidid><orcidid>https://orcid.org/0000-0003-1706-1910</orcidid><orcidid>https://orcid.org/0000-0002-0748-981X</orcidid></search><sort><creationdate>20220112</creationdate><title>The Intermetallic Semiconductor ht -IrGa 3 : a Material in the in-Transformation State</title><author>Cardoso-Gil, Raúl ; Zelenina, Iryna ; Stahl, Quirin E ; Bobnar, Matej ; Koželj, Primož ; Krnel, Mitja ; Burkhardt, Ulrich ; Veremchuk, Igor ; Simon, Paul ; Carrillo-Cabrera, Wilder ; Boström, Magnus ; Grin, Yuri</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c1239-cd7d095df10af1a9ae69fcc20e66e0acc054828d96c0be3de1b894a73c4a125b3</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2022</creationdate><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Cardoso-Gil, Raúl</creatorcontrib><creatorcontrib>Zelenina, Iryna</creatorcontrib><creatorcontrib>Stahl, Quirin E</creatorcontrib><creatorcontrib>Bobnar, Matej</creatorcontrib><creatorcontrib>Koželj, Primož</creatorcontrib><creatorcontrib>Krnel, Mitja</creatorcontrib><creatorcontrib>Burkhardt, Ulrich</creatorcontrib><creatorcontrib>Veremchuk, Igor</creatorcontrib><creatorcontrib>Simon, Paul</creatorcontrib><creatorcontrib>Carrillo-Cabrera, Wilder</creatorcontrib><creatorcontrib>Boström, Magnus</creatorcontrib><creatorcontrib>Grin, Yuri</creatorcontrib><collection>PubMed</collection><collection>CrossRef</collection><jtitle>ACS Materials Au</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Cardoso-Gil, Raúl</au><au>Zelenina, Iryna</au><au>Stahl, Quirin E</au><au>Bobnar, Matej</au><au>Koželj, Primož</au><au>Krnel, Mitja</au><au>Burkhardt, Ulrich</au><au>Veremchuk, Igor</au><au>Simon, Paul</au><au>Carrillo-Cabrera, Wilder</au><au>Boström, Magnus</au><au>Grin, Yuri</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>The Intermetallic Semiconductor ht -IrGa 3 : a Material in the in-Transformation State</atitle><jtitle>ACS Materials Au</jtitle><addtitle>ACS Mater Au</addtitle><date>2022-01-12</date><risdate>2022</risdate><volume>2</volume><issue>1</issue><spage>45</spage><epage>54</epage><pages>45-54</pages><issn>2694-2461</issn><eissn>2694-2461</eissn><abstract>The compound IrGa was synthesized by direct reaction of the elements. It is formed as a high-temperature phase in the Ir-Ga system. Single-crystal X-ray diffraction analysis confirms the tetragonal symmetry (space group 4 , No. 136) with = 6.4623(1) Å and = 6.5688(2) Å and reveals strong disorder in the crystal structure, reflected in the huge values and anisotropy of the atomic displacement parameters. A model for the real crystal structure of -IrGa is derived by the split-position approach from the single-crystal X-ray diffraction data and confirmed by an atomic-resolution transmission electron microscopy study. Temperature-dependent electrical resistivity measurements evidence semiconductor behavior with a band gap of 30 meV. A thermoelectric characterization was performed for -IrGa and for the solid solution IrGa Zn .</abstract><cop>United States</cop><pmid>36855699</pmid><doi>10.1021/acsmaterialsau.1c00025</doi><tpages>10</tpages><orcidid>https://orcid.org/0000-0003-1115-4024</orcidid><orcidid>https://orcid.org/0000-0003-3891-9584</orcidid><orcidid>https://orcid.org/0000-0003-1706-1910</orcidid><orcidid>https://orcid.org/0000-0002-0748-981X</orcidid></addata></record>
fulltext fulltext
identifier ISSN: 2694-2461
ispartof ACS Materials Au, 2022-01, Vol.2 (1), p.45-54
issn 2694-2461
2694-2461
language eng
recordid cdi_crossref_primary_10_1021_acsmaterialsau_1c00025
source NCBI_PubMed Central（免费）; American Chemical Society (ACS) Open Access
title The Intermetallic Semiconductor ht -IrGa 3 : a Material in the in-Transformation State
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-05T08%3A39%3A39IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-pubmed_cross&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=The%20Intermetallic%20Semiconductor%20ht%20-IrGa%203%20:%20a%20Material%20in%20the%20in-Transformation%20State&rft.jtitle=ACS%20Materials%20Au&rft.au=Cardoso-Gil,%20Ra%C3%BAl&rft.date=2022-01-12&rft.volume=2&rft.issue=1&rft.spage=45&rft.epage=54&rft.pages=45-54&rft.issn=2694-2461&rft.eissn=2694-2461&rft_id=info:doi/10.1021/acsmaterialsau.1c00025&rft_dat=%3Cpubmed_cross%3E36855699%3C/pubmed_cross%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c1239-cd7d095df10af1a9ae69fcc20e66e0acc054828d96c0be3de1b894a73c4a125b3%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/36855699&rfr_iscdi=true