All-Solution-Processed High-Performance MoS 2 Thin-Film Transistors with a Quasi-2D Perovskite Oxide Dielectric

• Published in: ACS nano 2024-01, Vol.18 (3), p.1958-1968
• Main Authors: Joung, Su-Yeon, Yim, Haena, Lee, Donghun, Shim, Jaehyung, Yoo, So Yeon, Kim, Yeon Ho, Kim, Jin Seok, Kim, Hyunjun, Hyeong, Seok-Ki, Kim, Junhee, Noh, Yong-Young, Bae, Sukang, Park, Myung Jin, Choi, Ji-Won, Lee, Chul-Ho
• Format: Article
• Language: English
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.3c06972

Assembling solution-processed van der Waals ( ) materials into thin films holds great promise for constructing large-scale, high-performance thin-film electronics, especially at low temperatures. While transition metal dichalcogenide thin films assembled in solution have shown potential as channel materials, fully solution-processed electronics have not been achieved due to the absence of suitable dielectric materials and high-temperature processing. In this work, we report on all-solution-processed thin-film transistors (TFTs) comprising molybdenum disulfides (MoS ) as the channel and Dion-Jacobson-phase perovskite oxides as the high-permittivity dielectric. The constituent layers are prepared as colloidal solutions through electrochemical exfoliation of bulk crystals, followed by sequential assembly into a semiconductor/dielectric heterostructure for TFT construction. Notably, all fabrication processes are carried out at temperatures below 250 °C. The fabricated MoS TFTs exhibit excellent device characteristics, including high mobility (>10 cm V s ) and an on/off ratio exceeding 10 . Additionally, the use of a high- dielectric allows for operation at low voltage (∼5 V) and leakage current (∼10 A), enabling low power consumption. Our demonstration of the low-temperature fabrication of high-performance TFTs presents a cost-effective and scalable approach for heterointegrated thin-film electronics.