Wafer-Scale Synthesis of Highly Oriented 2D Topological Semimetal PtTe 2 via Tellurization

• Published in: ACS nano 2024-06, Vol.18 (23), p.15154
• Main Authors: Choi, Minhyuk, Oh, Saeyoung, Hahn, Sungsoo, Ji, Yubin, Jo, Min-Kyung, Kim, Jeongtae, Ju, Tae-Seong, Kim, Gyeongbo, Gyeon, Minseung, Lee, Yuhwa, Do, Jeonghyeon, Choi, Seungwook, Kim, Ansoon, Yang, Seungmo, Hwang, Chanyong, Kim, Kab-Jin, Cho, Doohee, Kim, Changyoung, Kang, Kibum, Jeong, Hu Young, Song, Seungwoo
• Format: Article
• Language: English
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.4c02863

Platinum ditelluride (1 -PtTe ) is a two-dimensional (2D) topological semimetal with a distinctive band structure and flexibility of van der Waals integration as a promising candidate for future electronics and spintronics. Although the synthesis of large-scale, uniform, and highly crystalline films of 2D semimetals system is a prerequisite for device application, the synthetic methods meeting these criteria are still lacking. Here, we introduce an approach to synthesize highly oriented 2D topological semimetal PtTe using a thermally assisted conversion called tellurization, which is a cost-efficient method compared to the other epitaxial deposition methods. We demonstrate that achieving highly crystalline 1 -PtTe using tellurization is not dependent on epitaxy but rather relies on two critical factors: (i) the crystallinity of the predeposited platinum (Pt) film and (ii) the surface coverage ratio of the Pt film considering lateral lattice expansion during transformation. By optimizing the surface coverage ratio of the epitaxial Pt film, we successfully obtained 2 in. wafer-scale uniformity without in-plane misalignment between antiparallelly oriented domains. The electronic band structure of 2D topological PtTe is clearly resolved in momentum space, and we observed an interesting 6-fold gapped Dirac cone at the Fermi surface. Furthermore, ultrahigh electrical conductivity down to ∼3.8 nm, which is consistent with that of single crystal PtTe , was observed, proving its ultralow defect density.