Strain-Gradient Modulated Exciton Emission in Bent ZnO Wires Probed by Cathodoluminescence

• Published in: ACS nano 2016-12, Vol.10 (12), p.11469-11474
• Main Authors: Fu, Xue-Wen, Li, Cai-Zhen, Fang, Liang, Liu, Da-Meng, Xu, Jun, Yu, Da-Peng, Liao, Zhi-Min
• Format: Article
• Language: English
• ISSN: 1936-0851; 1936-086X
• DOI: 10.1021/acsnano.6b07206

Photoelectrical properties of semiconductor nanostructures are expected to be improved significantly by strain engineering. Besides the local strain, the strain gradient is promising to tune the luminescence properties by modifying the crystal symmetry. Here, we report the investigation of strain-gradient induced symmetry-breaking effect on excitonic states in pure bending ZnO microwires by high spatial-resolved cathodoluminescence at low temperature of 80 K. In addition to the local-strain induced light emission peak shift, the bound exciton emission photon energy shows an extraordinary jump of ∼16.6 meV at a high strain-gradient of 1.22% μm–1, which is ascribed to the strain gradient induced symmetry-breaking. Such a symmetry-breaking lifts the energy degeneracy of the electronic band structures, which significantly modifies the electron–hole interactions and the fine structures of the bound exciton states. These results provide a further understanding of the strain gradient effect on the excitonic states and possess a potential for the applications in optoelectronic devices.