Synthesis and Characterization of a Trigonal Layered Compound AgInS 2

Depending on thermal and pressure conditions, AgInS exhibits various crystal structures. In this study, we synthesized a high-purity polycrystalline sample of trigonal AgInS , which is a layered compound, using a high-pressure synthesis technique. The crystal structure was investigated by synchrotro...

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Bibliographic Details
Published in:ACS omega 2023-03, Vol.8 (12), p.11288-11292
Main Authors: Sawahara, Takahiro, Matsumoto, Ryo, Nakahira, Yuki, Usui, Hidetomo, Kataoka, Noriyuki, Saitou, Ryusei, Wakita, Takanori, Yokoya, Takayoshi, Yamashita, Aichi, Goto, Yosuke, Takano, Yoshihiko, Miura, Akira, Mizuguchi, Yoshikazu
Format: Article
Language:English
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Summary:Depending on thermal and pressure conditions, AgInS exhibits various crystal structures. In this study, we synthesized a high-purity polycrystalline sample of trigonal AgInS , which is a layered compound, using a high-pressure synthesis technique. The crystal structure was investigated by synchrotron powder X-ray diffraction and the Rietveld refinement. On the basis of band calculation, X-ray photoelectron spectroscopy, and electrical resistance measurements, we found that the obtained trigonal AgInS is a semiconductor. Temperature dependencies of electrical resistance of AgInS were measured by a diamond anvil cell up to 31.2 GPa. Although semiconducting behavior was suppressed with pressure, metallic behavior was not observed within the pressure range investigated in this study.
ISSN:2470-1343
2470-1343
DOI:10.1021/acsomega.2c08289