Preferentially Grown Ultranano c‑Diamond and n‑Diamond Grains on Silicon Nanoneedles from Energetic Species with Enhanced Field-Emission Properties

The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 4...

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Bibliographic Details
Published in:ACS applied materials & interfaces 2012-10, Vol.4 (10), p.5103-5108
Main Authors: Thomas, Joseph P, Chen, Huang-Chin, Tseng, Shih-Hao, Wu, Hung-Chi, Lee, Chi-Young, Cheng, Hsiu Fung, Tai, Nyan-Hwa, Lin, I-Nan
Format: Article
Language:English
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Summary:The design and fabrication of well-defined nanostructures have great importance in nanoelectronics. Here we report the precise growth of sub-2 nm (c-diamond) and above 5 nm (n-diamond) size diamond grains from energetic species (chemical vapor deposition process) at low growth temperature of about 460 °C. We demonstrate that a pre-nucleation induced interface can be accounted for the growth of c-diamond or n-diamond grains on Si-nanoneedles (Si-NN). These preferentially grown allotropic forms of diamond on Si-NN have shown high electron field-emission properties and signify their high potential towards diamond-based electronic applications.
ISSN:1944-8244
1944-8252
DOI:10.1021/am3016203