Erbium-Doped Mixed Oxide Nanowires of Zinc and Germanium: Role of Host Structure on Near Infrared Emission

This work describes the fabrication of Er-doped oxide nanowires containing both zinc and germanium through selected sol–gel reactions in concert with electrospinning and thermal removal of polymer templates. These nanowires exhibit strong Er3+ near-IR photoluminescence at 1.54 μm after annealing; it...

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Bibliographic Details
Published in:Crystal growth & design 2012-05, Vol.12 (5), p.2362-2366
Main Authors: Huang, Xuezhen, Coffer, Jeffery L
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Nanoscale materials and structures: fabrication and characterization
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Other topics in nanoscale materials and structures
Photoluminescence
Physics
Quantum wires
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Summary:This work describes the fabrication of Er-doped oxide nanowires containing both zinc and germanium through selected sol–gel reactions in concert with electrospinning and thermal removal of polymer templates. These nanowires exhibit strong Er3+ near-IR photoluminescence at 1.54 μm after annealing; it is found that the mechanism of this emission can be mediated through the selection of appropriate composition and annealing temperature. Relatively high Er concentrations (up to 3 at. %, excluding oxygen) can be incorporated into these structures, with retention of Er3+ emission due presumably to an absence of erbium self-quenching and associated nonradiative pathways.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg300023t