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Erbium-Doped Mixed Oxide Nanowires of Zinc and Germanium: Role of Host Structure on Near Infrared Emission
This work describes the fabrication of Er-doped oxide nanowires containing both zinc and germanium through selected sol–gel reactions in concert with electrospinning and thermal removal of polymer templates. These nanowires exhibit strong Er3+ near-IR photoluminescence at 1.54 μm after annealing; it...
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| Published in: | Crystal growth & design 2012-05, Vol.12 (5), p.2362-2366 |
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| Main Authors: | , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-a289t-d76538a028a5500a4494feadfe9b643999ff6a83868353f3deab761449a1ff3d3 |
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| cites | cdi_FETCH-LOGICAL-a289t-d76538a028a5500a4494feadfe9b643999ff6a83868353f3deab761449a1ff3d3 |
| container_end_page | 2366 |
| container_issue | 5 |
| container_start_page | 2362 |
| container_title | Crystal growth & design |
| container_volume | 12 |
| creator | Huang, Xuezhen Coffer, Jeffery L |
| description | This work describes the fabrication of Er-doped oxide nanowires containing both zinc and germanium through selected sol–gel reactions in concert with electrospinning and thermal removal of polymer templates. These nanowires exhibit strong Er3+ near-IR photoluminescence at 1.54 μm after annealing; it is found that the mechanism of this emission can be mediated through the selection of appropriate composition and annealing temperature. Relatively high Er concentrations (up to 3 at. %, excluding oxygen) can be incorporated into these structures, with retention of Er3+ emission due presumably to an absence of erbium self-quenching and associated nonradiative pathways. |
| doi_str_mv | 10.1021/cg300023t |
| format | article |
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These nanowires exhibit strong Er3+ near-IR photoluminescence at 1.54 μm after annealing; it is found that the mechanism of this emission can be mediated through the selection of appropriate composition and annealing temperature. 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Growth Des</addtitle><description>This work describes the fabrication of Er-doped oxide nanowires containing both zinc and germanium through selected sol–gel reactions in concert with electrospinning and thermal removal of polymer templates. These nanowires exhibit strong Er3+ near-IR photoluminescence at 1.54 μm after annealing; it is found that the mechanism of this emission can be mediated through the selection of appropriate composition and annealing temperature. 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Growth Des</addtitle><date>2012-05-02</date><risdate>2012</risdate><volume>12</volume><issue>5</issue><spage>2362</spage><epage>2366</epage><pages>2362-2366</pages><issn>1528-7483</issn><eissn>1528-7505</eissn><abstract>This work describes the fabrication of Er-doped oxide nanowires containing both zinc and germanium through selected sol–gel reactions in concert with electrospinning and thermal removal of polymer templates. These nanowires exhibit strong Er3+ near-IR photoluminescence at 1.54 μm after annealing; it is found that the mechanism of this emission can be mediated through the selection of appropriate composition and annealing temperature. 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| ispartof | Crystal growth & design, 2012-05, Vol.12 (5), p.2362-2366 |
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| language | eng |
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| source | American Chemical Society:Jisc Collections:American Chemical Society Read & Publish Agreement 2022-2024 (Reading list) |
| subjects | Condensed matter: electronic structure, electrical, magnetic, and optical properties Cross-disciplinary physics: materials science rheology Exact sciences and technology Materials science Nanoscale materials and structures: fabrication and characterization Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation Other topics in nanoscale materials and structures Photoluminescence Physics Quantum wires |
| title | Erbium-Doped Mixed Oxide Nanowires of Zinc and Germanium: Role of Host Structure on Near Infrared Emission |
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