Loading…

Flux Engineering To Control In-Plane Crystal and Morphological Orientation

We tailored nanostructured morphology and crystal texture of iron nanocolumns by engineering the inclination and azimuthal directions of the collimated flux characteristic of glancing angle deposition (GLAD). Under continuous substrate rotation, the flux is azimuthally isotropic within one rotation....

Full description

Saved in:
Bibliographic Details
Published in:Crystal growth & design 2012-07, Vol.12 (7), p.3661-3667
Main Authors: LaForge, Joshua M, Ingram, Grayson L, Taschuk, Michael T, Brett, Michael J
Format: Article
Language:English
Subjects:
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:We tailored nanostructured morphology and crystal texture of iron nanocolumns by engineering the inclination and azimuthal directions of the collimated flux characteristic of glancing angle deposition (GLAD). Under continuous substrate rotation, the flux is azimuthally isotropic within one rotation. With large substrate rotation speeds, we can deposit vertical nanocolumns with a faceted, tetrahedral apex, BCC crystal structure and ⟨111⟩ fiber texture. Designing the flux to have an azimuthal 3-fold symmetry, which reflects the symmetry of the tetrahedral apex, allows us to induce both an in-plane and out-of-plane texture (biaxial texture) by evolutionary selection. In-plane crystal orientation is accompanied by a preferential azimuthal nanocolumn orientation, where the sides of tetrahedral apex are directed toward the flux direction. This work demonstrates the flux engineering technique, which can orient in-plane crystal texture and morphology of crystalline nanocolumns on amorphous substrates. This control is a useful addition to vapor–solid, physical self-assembly with the potential to improve the performance of porous thin film architectures as biaxial buffer layers, and in a variety of device applications such as photovoltaics and energy storage.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg300469s