Nucleation and Growth Modes of ALD ZnO

The initial phases of the ALD growth of ZnO have been examined. It is shown that ZnO exhibits an island-like growth on Si, layer-by-layer on GaN, whereas on sapphire, the growth mode can be tuned by the deposition temperature. A new method for depositing ultrathin smooth polycrystalline films is pre...

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Bibliographic Details
Published in:Crystal growth & design 2012-11, Vol.12 (11), p.5615-5620
Main Authors: Baji, Zsófia, Lábadi, Zoltán, Horváth, Zsolt E, Molnár, György, Volk, János, Bársony, István, Barna, Péter
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
General studies of phase transitions
Materials science
Methods of crystal growth
physics of crystal growth
Nucleation
Physics
Theory and models of crystal growth
physics of crystal growth, crystal morphology and orientation
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Summary:The initial phases of the ALD growth of ZnO have been examined. It is shown that ZnO exhibits an island-like growth on Si, layer-by-layer on GaN, whereas on sapphire, the growth mode can be tuned by the deposition temperature. A new method for depositing ultrathin smooth polycrystalline films is presented. The growth rates on different substrates and at different deposition temperatures were analyzed, and the possibility of epitaxial growth was also examined.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg301129v