Dislocation Analysis of a New Method for Growing Large-Size Crystals of Monocrystalline Silicon Using a Seed Casting Technique

• Published in: Crystal growth & design 2012-12, Vol.12 (12), p.6144-6150
• Main Authors: Gao, Bing, Nakano, Satoshi, Harada, Hirofumi, Miyamura, Yoshiji, Sekiguchi, Takashi, Kakimoto, Koichi
• Format: Article
• Language: English
• Subjects: Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Defects and impurities in crystals; microstructure; Equations of state, phase equilibria, and phase transitions; Exact sciences and technology; General studies of phase transitions; Linear defects: dislocations, disclinations; Materials science; Methods of crystal growth; physics of crystal growth; Nucleation; Physics; Solid-solid transitions; Specific phase transitions; Structure of solids and liquids; crystallography; Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
• ISSN: 1528-7483; 1528-7505
• DOI: 10.1021/cg301274d

A new method is proposed for growing large-size crystals of monocrystalline silicon using a seed casting technique. The stress and dislocation distributions for this type of growth during crystallization were simulated. The results indicate that the order of dislocation density is not very large. If the cooling flux of the crystal growth is controlled to be small at the initial stage, and the annihilation and direction effects of dislocation in the Alexander and Haasen model are included, the real dislocation density could be considerably smaller than the calculated value. Therefore, the new growth method for monocrystalline silicon is promising for complete single crystal growth, effectively avoids polycrystalline nucleation, and has a moderate dislocation density.