Extremely High- and Low-Density of Ga Droplets on GaAs{111}A,B: Surface-Polarity Dependence

Formation processes of Ga droplets on polar (111)­A and (111)B surfaces of GaAs have been investigated. A single Ga atom forms a stable nucleus on the (111)­A surface, so that the formation of extremely high-density of Ga droplets is achieved (2.8 × 1012 cm–2). On the (111)B surface, the initial Ga...

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Bibliographic Details
Published in:Crystal growth & design 2015-01, Vol.15 (1), p.485-488
Main Authors: Ohtake, Akihiro, Ha, Neul, Mano, Takaaki
Format: Article
Language:English
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Summary:Formation processes of Ga droplets on polar (111)­A and (111)B surfaces of GaAs have been investigated. A single Ga atom forms a stable nucleus on the (111)­A surface, so that the formation of extremely high-density of Ga droplets is achieved (2.8 × 1012 cm–2). On the (111)B surface, the initial Ga deposition on both As-rich (2 × 2) and Ga-rich (√19 × √19) reconstructions leads to the formation of a two-dimensional GaAs layer having a more Ga-rich (3 × 2) reconstruction. The Ga droplets are formed on the (3 × 2) surface with their densities being 4 orders of magnitude lower than those for the (111)­A orientation.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg501545n