Formation of Spatially Addressed Ga(As)Sb Quantum Rings on GaAs(001) Substrates by Droplet Epitaxy

In this work we report on the ability to form low density Ga(As)Sb quantum ring-shaped nanostructures (Q-rings) on GaAs(001) substrates by the droplet epitaxy technique. The Q-rings are formed by crystallization of Ga droplets under antimony flux. After being capped by a GaAs layer, these nanostruct...

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Bibliographic Details
Published in:Crystal growth & design 2009-02, Vol.9 (2), p.1216-1218
Main Authors: Alonso-González, Pablo, González, Luisa, Fuster, David, González, Yolanda, Taboada, Alfonso G, Ripalda, José María, Beltrán, Ana M, Sales, David L, Ben, Teresa, Molina, Sergio I
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Equations of state, phase equilibria, and phase transitions
Exact sciences and technology
Physics
Solid-solid transitions
Specific phase transitions
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Summary:In this work we report on the ability to form low density Ga(As)Sb quantum ring-shaped nanostructures (Q-rings) on GaAs(001) substrates by the droplet epitaxy technique. The Q-rings are formed by crystallization of Ga droplets under antimony flux. After being capped by a GaAs layer, these nanostructures show surface mounding features that are correlated with the buried nanostructures, as demonstrated by TEM analysis, permitting an easy surface location of the optically active Q-rings.
ISSN:1528-7483
1528-7505
DOI:10.1021/cg801186w