Atomic Layer Deposition of Hafnium Dioxide Films from 1-Methoxy-2-methyl-2-propanolate Complex of Hafnium

HfO2 films were grown by atomic layer deposition from a mononuclear and volatile complex Hf(OCMe2CH2OMe)4 in the temperature range of 275−425 °C on borosilicate glass and Si(100) substrates. HfO2 films were formed as a result of alternate adsorption and hydrolysis steps of the hafnium precursor. The...

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Bibliographic Details
Published in:Chemistry of materials 2003-04, Vol.15 (8), p.1722-1727
Main Authors: Kukli, Kaupo, Ritala, Mikko, Leskelä, Markku, Sajavaara, Timo, Keinonen, Juhani, Jones, Anthony C, Roberts, John L
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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Summary:HfO2 films were grown by atomic layer deposition from a mononuclear and volatile complex Hf(OCMe2CH2OMe)4 in the temperature range of 275−425 °C on borosilicate glass and Si(100) substrates. HfO2 films were formed as a result of alternate adsorption and hydrolysis steps of the hafnium precursor. The adsorption of hafnium complex was not entirely self-limiting, probably because of the thermal decomposition of the precursors. Crystalline films containing the monoclinic HfO2 phase were grown at temperatures exceeding 300−325 °C. The refractive index of the films varied between 1.8 and 2.0. The effective permittivities of the dielectrics in Al/HfO2/Si structures varied between 12 and 17.
ISSN:0897-4756
1520-5002
DOI:10.1021/cm021328p