Atomic Layer Deposition of Hafnium Dioxide Films from 1-Methoxy-2-methyl-2-propanolate Complex of Hafnium

HfO2 films were grown by atomic layer deposition from a mononuclear and volatile complex Hf(OCMe2CH2OMe)4 in the temperature range of 275−425 °C on borosilicate glass and Si(100) substrates. HfO2 films were formed as a result of alternate adsorption and hydrolysis steps of the hafnium precursor. The...

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Published in:Chemistry of materials 2003-04, Vol.15 (8), p.1722-1727
Main Authors: Kukli, Kaupo, Ritala, Mikko, Leskelä, Markku, Sajavaara, Timo, Keinonen, Juhani, Jones, Anthony C, Roberts, John L
Format: Article
Language:English
Subjects:
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
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cited_by cdi_FETCH-LOGICAL-a325t-8683a031ebac5ce4934aa516190d6ead1fa54d3656f2b34a846f29fbf25da3d43
cites cdi_FETCH-LOGICAL-a325t-8683a031ebac5ce4934aa516190d6ead1fa54d3656f2b34a846f29fbf25da3d43
container_end_page 1727
container_issue 8
container_start_page 1722
container_title Chemistry of materials
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creator Kukli, Kaupo
Ritala, Mikko
Leskelä, Markku
Sajavaara, Timo
Keinonen, Juhani
Jones, Anthony C
Roberts, John L
description HfO2 films were grown by atomic layer deposition from a mononuclear and volatile complex Hf(OCMe2CH2OMe)4 in the temperature range of 275−425 °C on borosilicate glass and Si(100) substrates. HfO2 films were formed as a result of alternate adsorption and hydrolysis steps of the hafnium precursor. The adsorption of hafnium complex was not entirely self-limiting, probably because of the thermal decomposition of the precursors. Crystalline films containing the monoclinic HfO2 phase were grown at temperatures exceeding 300−325 °C. The refractive index of the films varied between 1.8 and 2.0. The effective permittivities of the dielectrics in Al/HfO2/Si structures varied between 12 and 17.
doi_str_mv 10.1021/cm021328p
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subjects Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
title Atomic Layer Deposition of Hafnium Dioxide Films from 1-Methoxy-2-methyl-2-propanolate Complex of Hafnium
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