Novel Synthesis of High Surface Area Silicon Carbide by RAPET (Reactions under Autogenic Pressure at Elevated Temperature) of Organosilanes

We report on a very simple, efficient, and economical synthetic technique that produces SiC of a high surface area, and under different conditions of a silicon carbide−carbon nanocomposite (SCCN) at a relatively low temperature. A high yield of pure products is obtained in a one-stage, single-precur...

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Bibliographic Details
Published in:Chemistry of materials 2005-04, Vol.17 (7), p.1797-1802
Main Authors: Pol, Vilas G, Pol, Swati V, Gedanken, Aharon
Format: Article
Language:English
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Summary:We report on a very simple, efficient, and economical synthetic technique that produces SiC of a high surface area, and under different conditions of a silicon carbide−carbon nanocomposite (SCCN) at a relatively low temperature. A high yield of pure products is obtained in a one-stage, single-precursor reaction, without a catalyst. The cracking/dissociation of a triethylsilane precursor is carried out separately in a closed vessel cell (Swagelok) that was heated at 800 °C for 3 h, yielding SCCN, and at 1000 °C for 3 h, yielding SiC. This synthetic process is termed RAPET (Reactions under Autogenic Pressure at Elevated Temperature) process for the synthesis of nanomaterials.
ISSN:0897-4756
1520-5002
DOI:10.1021/cm048032z