Preparation of Epitaxial Uranium Dicarbide Thin Films by Polymer-Assisted Deposition

High quality epitaxial thin films of cubic UC2 were synthesized using a solution based technique. The films were characterized using XRD, UPS, Raman, and resistivity. The substrate lattice is yttrium stabilized zirconia and serves to stabilize the high temperature cubic phaseof UC2 (>1765 °C) at...

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Bibliographic Details
Published in:Chemistry of materials 2013-11, Vol.25 (21), p.4373-4377
Main Authors: Jilek, Robert E, Bauer, Eve, Burrell, Anthony K, McCleskey, Thomas M, Jia, Quanxi, Scott, Brian L, Beaux, Miles F, Durakiewicz, Tomasz, Joyce, John J, Rector, Kirk D, Xiong, Jie, Gofryk, Krzysztof, Ronning, Filip, Martin, Richard L
Format: Article
Language:English
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Summary:High quality epitaxial thin films of cubic UC2 were synthesized using a solution based technique. The films were characterized using XRD, UPS, Raman, and resistivity. The substrate lattice is yttrium stabilized zirconia and serves to stabilize the high temperature cubic phaseof UC2 (>1765 °C) at room temperature. The resistivity and UPS data indicate that UC2 has relatively low electrical conductivity consistent with HSE hybrid DFT calculations showing a narrow band gap. In situ XRD measurements show that the UC2 films oxidize to U3O8 above 200 °C.
ISSN:0897-4756
1520-5002
DOI:10.1021/cm402655p